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NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET
FEATURES
* LOW COST PLASTIC SURFACE MOUNT PACKAGE * HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V * HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz * SINGLE SUPPLY: 2.8 to 6 V * SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
5.7 MAX. 0.60.15 4.2 MAX.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)
1.50.2
Source
Source
W
0X00 1
Gate
Drain
4.4 MAX. 0.80.15
1.0 MAX.
Gate
Drain
1.2 MAX.
A
0.40.15 5.7 MAX.
0.20.1
0.8 MAX.
3.60.2
DESCRIPTION
NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 m WSi gate lateral MOSFET) and housed in a surface mount package.
APPLICATIONS
* DIGITAL CELLULAR PHONES: 3.0 V GSM1900 Pre Driver * ANALOG CELLULAR PHONES: 2.4 V AMPS Handsets * OTHERS: W-LAN Short Range Wireless Retail Business Radio Special Mobile Radio
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE Functional Characteristics SYMBOLS POUT GL CHARACTERISTICS Output Power Linear Gain Power Added Efficiency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Voltage) Gate Threshold Voltage Transconductance Drain-to-Source Breakdown Voltage Thermal Resistance UNITS dBm dB % A nA nA V S V C/W 15 1 1.4 0.4 18 10 35 MIN 24.0 NE552R479A 79A TYP 26.0 11.0 45 230 100 100 1.9 MAX TEST CONDITIONS f = 2.45 GHz, VDS = 3.0 V, IDSQ = 200 mA (RF OFF) Pin = 19 dBm, except Pin = 10 dBm for linear gain VGS = 5.0 V VDS = 6.0 V VDS = 3.5 V, IDS = 1 mA VDS = 3.5 V, IDS = 100 mA IDSS = 10 A Channel-to-Case
ADD
ID IGSS IDSS VTH gm BVDSS RTH
Notes: 1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for several samples.
Electrical DC Characteristics
0.90.2
California Eastern Laboratories
NE552R479A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C)
SYMBOLS VDS VGS IDS IDS PT TCH TSTG PARAMETERS UNITS V V mA
2
RECOMMENDED OPERATING LIMITS
SYMBOLS VDS VGS IDS PIN PARAMETERS UNITS V V mA dBm TYP 3.0 2.0 200 19 Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power2
RATINGS 15.0 5.0 300 600 10 125
MAX 6.0 3.0 500 25
Drain Supply Voltage Gate Supply Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Temperature
mA W C C
-55 to +125
Notes: 1. Duty cycle 50%, Ton 1 s. 2. f = 2.45 GHz, VDS = 3.0 V.
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Duty cycle 50%, Ton 1 s.
LARGE SIGNAL IMPEDANCE
FREQUENCY (GHz) 2.45 Zin () 2.96 -j7.78
(VDS = 3.0 V, ID = 200 mA, f = 2.45 GHz, Pout = 400 mW) ZOL () 1 3.36 -j8.42
ORDERING INFORMATION
PART NUMBER QTY NE552R479A-T1A-A * 12 mm wide embossed taping. * Gate pin faces the perforation side of the tape. * 5 kpcs/Reel
Note: 1. ZOL is the conjugate of optimum load impedance at given voltage, idling current, input power and frequency.
TYPICAL PERFORMANCE CURVES
(TA = 25C)
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
25
1.0
DRAIN CURRENT vs. DRAIN VOLTAGE
Gate Voltage (V) 3.75
Total Power Dissipation, PD (W)
20
Drain Current, ID (A)
0.8
3.50
3.25
15
0.6
3.00
RTH = 10C/W
10
2.75
0.4
2.50
5
0.2
2.25
2.20
0
0.0
1.75
0
25
50
75
100
125
150
0.00
2.0
4.0
6.0
8.0
10.0
Case Temperature, TC (C)
Drain Voltage, VD (V)
NE552R479A TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
30
Ids(mA)
(TA = 25C)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1250
Ids(mA)
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Output Power, Pout (dBm)
Output Power, Pout (dBm)
Pout 1000
25 Pout 20 d 15
1000
100
25
100
750
75
20 d 15 add
750
75
add
500
50
500
50
10 Ids
250
25
10
Ids
250
25
5
0 5 10 15 20 25
0
0
5 0 1 2 3 4
0
0
Input Power,Pin (dBm)
Gate to Source Voltage, Vgs (V)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER Drain Efficiency, d (%) Power Added Efficiency, add (%)
Pout 1000
Ids(mA)
IMD vs. TWO TONE OUTPUT POWER
1250
30
Output Power, Pout (dBm)
Frequency = 2.45 GHz Vds = 3.0 V Idq = 200 mA
-10
25
100
-20
Frequency = 2.45 GHz Frequency = 1 MHz Vds = 3.0 V Idq = 200 mA
20 d 15 Ids
750
75
IMD,(dBC)
-30
IM3
IM5 -40
add
500
50
-50
10
250
25
-60
5
0 5 10
15
0 20 25
0
-70 5 10 15 20 25 30
Input Power,Pin (dBm)
Average Two Tone Output Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER
30
Ids(mA)
OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1250
Ids(mA)
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Pout 1000
Output Power, Pout (dBm)
25
100
Output Power, Pout (dBm)
25
1000
100
20 d add 15
750
75
20
d add
750
75
500
50
15 Ids
500
50
10
Ids
250
25
10
250
25
5
0 5 10 15 20 25
0
0
5 0 1 2
3
0 4
0
Input Power,Pin (dBm)
Gate to Source Voltage, Vgs (V)
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Frequency = 2.0 GHz Vds = 3.0 V Idq = 150 mA
30
Frequency = 2.0 GHz Vds = 3.0 V Pout Pin = 19 dBm
1250
Drain Efficiency, d (%) Power Added Efficiency, add (%)
Frequency = 2.45 GHz Vds = 3.0 V Idq = 100 mA
30
Frequency = 2.45 GHz Vds = 3.0 V Pin = 19 dBm
1250
NE552R479A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25
S22 S11
j100
120 150
90
S21
60 30
S12
j10 0
10
25
50
100
0
180
0
-j10
-j25 -j50
-j100
Coordinates in Ohms Frequency in GHz VD = 2.4 V, ID = 50 mA
-150 -120 -60
-30
-90
NE552R479A VD = 2.4 V, ID = 50 mA
FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain Calculation: MAG 0.877 0.806 0.775 0.764 0.760 0.765 0.771 0.781 0.792 0.805 0.816 0.829 0.838 0.848 0.855 0.861 0.866 0.872 0.877 0.883 0.889 0.895 0.901 0.905 0.909 0.909 0.911 0.910 0.912 0.912 0.915 0.916 0.919 0.920 0.922 0.923 0.924 0.924 0.925 0.925 S11 ANG - 70.3 -108.8 -129.7 -142.5 -151.0 -157.3 -162.3 -166.4 -170.0 -173.2 -176.0 -178.7 178.6 176.4 174.2 172.2 170.3 168.5 166.8 165.2 163.8 162.3 161.1 159.8 158.8 157.8 157.0 156.3 155.7 155.1 154.8 154.2 153.8 153.4 153.1 153.0 153.0 153.1 153.5 154.1 MAG 13.863 9.339 6.708 5.130 4.102 3.378 2.846 2.437 2.113 1.854 1.644 1.458 1.304 1.172 1.057 0.958 0.871 0.795 0.729 0.671 0.619 0.572 0.531 0.493 0.459 0.427 0.399 0.373 0.350 0.329 0.311 0.294 0.278 0.263 0.251 0.239 0.228 0.217 0.208 0.200 S21 ANG 135.4 111.6 97.4 87.2 79.2 72.3 66.1 60.6 55.5 50.6 46.2 41.7 37.5 33.7 30.0 26.5 23.3 20.3 17.3 14.6 11.9 9.3 6.9 4.5 2.2 0.1 - 1.9 - 3.8 - 5.5 - 7.2 - 8.8 - 10.4 - 11.9 - 13.4 - 14.8 - 16.1 - 17.4 - 18.7 - 19.9 - 21.2 MAG 0.042 0.057 0.061 0.062 0.061 0.060 0.059 0.057 0.055 0.053 0.051 0.048 0.046 0.044 0.041 0.039 0.037 0.035 0.033 0.031 0.029 0.027 0.026 0.024 0.023 0.021 0.019 0.018 0.016 0.015 0.014 0.012 0.011 0.010 0.008 0.007 0.006 0.005 0.004 0.003 S12 ANG 46.6 23.4 9.6 0.6 - 7.0 - 13.0 - 18.2 - 23.0 - 27.3 - 31.4 - 34.8 - 38.5 - 41.8 - 44.9 - 47.6 - 50.3 - 52.4 - 54.4 - 56.7 - 58.7 - 60.2 - 62.1 - 63.8 - 65.6 - 67.3 - 68.8 - 71.4 - 74.0 - 74.2 - 74.8 - 75.5 - 77.4 - 77.8 - 79.9 - 80.8 - 78.5 - 75.4 - 73.6 - 70.4 - 50.4 MAG 0.452 0.569 0.614 0.641 0.663 0.681 0.699 0.717 0.734 0.751 0.770 0.781 0.793 0.806 0.818 0.830 0.841 0.851 0.861 0.870 0.878 0.885 0.892 0.898 0.903 0.909 0.914 0.919 0.924 0.927 0.932 0.935 0.939 0.943 0.948 0.951 0.953 0.957 0.960 0.961 S22 ANG -104.4 -132.8 -145.1 -151.6 -155.4 -158.2 -160.3 -161.9 -163.4 -164.8 -166.0 -167.7 -169.1 -170.4 -171.7 -173.1 -174.5 -175.9 -177.4 -178.8 179.7 178.2 176.8 175.2 173.8 172.3 170.8 169.1 167.5 166.0 164.4 162.9 161.3 159.6 157.9 156.1 154.1 152.1 149.6 146.8 K 0.05 0.05 0.07 0.09 0.12 0.14 0.17 0.20 0.22 0.23 0.23 0.27 0.31 0.33 0.38 0.43 0.49 0.56 0.61 0.65 0.68 0.74 0.76 0.82 0.89 1.02 1.19 1.41 1.55 1.82 1.90 2.19 2.41 2.77 3.15 3.72 4.29 4.86 6.62 9.58 MAG1 (dB) 25.15 22.13 20.43 19.17 18.24 17.49 16.85 16.32 15.86 15.46 15.11 14.80 14.53 14.29 14.07 13.89 13.72 13.61 13.49 13.39 13.29 13.22 13.14 13.07 13.05 12.11 10.52 9.38 8.93 8.26 8.13 7.63 7.39 7.11 6.98 6.76 6.58 6.47 6.36 5.98
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE552R479A TYPICAL SCATTERING PARAMETERS (TA = 25C)
Note: This file and many other s-parameter files can be downloaded from www.cel.com
j50 j25
S22 S11
j100
120 150
90
S21
60 30
S12
j10 0
10
25
50
100
0
180
0
-j10
-j25
-j100 -j50
Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 200 mA
-150 -120 -60
-30
NE552R479A VD = 3.5 V, ID = 200 mA
FREQUENCY GHz 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 Note: 1. Gain Calculation: MAG 0.881 0.833 0.813 0.805 0.800 0.801 0.802 0.807 0.812 0.820 0.827 0.836 0.840 0.847 0.851 0.854 0.857 0.861 0.865 0.870 0.875 0.880 0.885 0.889 0.892 0.893 0.895 0.894 0.895 0.896 0.899 0.900 0.903 0.904 0.906 0.907 0.909 0.908 0.910 0.910 S11
-90
S21 ANG - 80.4 -119.4 -139.1 -151.0 -158.9 -164.7 -169.3 -173.1 -176.3 -179.2 178.4 175.9 173.6 171.8 169.8 168.1 166.4 164.9 163.5 162.1 160.9 159.6 158.5 157.5 156.6 155.7 155.0 154.5 153.9 153.5 153.2 152.8 152.4 152.0 151.9 151.8 151.8 152.1 152.5 153.1 MAG 17.975 11.643 8.264 6.317 5.073 4.206 3.577 3.093 2.711 2.405 2.158 1.936 1.752 1.592 1.452 1.331 1.223 1.127 1.044 0.969 0.902 0.841 0.786 0.736 0.689 0.646 0.607 0.571 0.540 0.511 0.485 0.460 0.438 0.417 0.398 0.381 0.365 0.350 0.337 0.325 ANG 132.9 110.6 98.2 89.6 82.9 77.2 72.1 67.4 63.1 58.9 55.1 51.1 47.4 43.9 40.4 37.3 34.2 31.3 28.4 25.8 23.1 20.5 18.0 15.6 13.3 11.0 9.0 6.9 5.0 3.2 1.5 - 0.3 - 1.9 - 3.6 - 5.1 - 6.7 - 8.3 - 9.7 - 11.2 - 12.8 MAG 0.030 0.039 0.042 0.042 0.042 0.042 0.041 0.040 0.039 0.038 0.037 0.036 0.034 0.033 0.032 0.030 0.029 0.027 0.026 0.025 0.024 0.023 0.022 0.020 0.019 0.018 0.017 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.005 0.005
S12 ANG 44.0 22.1 10.8 3.3 - 1.9 - 6.9 - 10.8 - 14.2 - 17.7 - 20.7 - 23.6 - 26.4 - 28.9 - 30.9 - 33.7 - 35.5 - 37.3 - 39.0 - 40.7 - 41.6 - 43.3 - 44.3 - 45.3 - 46.9 - 48.5 - 49.6 - 50.5 - 53.1 - 52.4 - 50.3 - 50.7 - 51.9 - 49.9 - 47.2 - 44.6 - 38.1 - 33.2 - 26.9 - 15.3 - 4.5 MAG 0.490 0.623 0.666 0.689 0.704 0.714 0.725 0.735 0.744 0.754 0.767 0.773 0.781 0.790 0.799 0.808 0.817 0.824 0.833 0.841 0.849 0.855 0.862 0.869 0.875 0.881 0.886 0.891 0.897 0.902 0.907 0.911 0.915 0.920 0.925 0.928 0.932 0.936 0.940 0.941
S22 ANG -134.7 -151.5 -159.4 -163.6 -166.2 -168.1 -169.4 -170.5 -171.5 -172.3 -173.0 -174.2 -175.1 -176.0 -176.9 -177.8 -178.8 -179.9 178.9 177.8 176.7 175.5 174.2 172.9 171.6 170.3 169.0 167.5 166.1 164.7 163.2 161.7 160.3 158.7 157.0 155.3 153.4 151.5 149.0 146.3
K 0.06 0.06 0.08 0.11 0.14 0.17 0.21 0.24 0.26 0.28 0.29 0.32 0.37 0.41 0.45 0.51 0.58 0.66 0.69 0.76 0.81 0.85 0.88 0.96 1.03 1.17 1.32 1.61 1.81 2.08 2.11 2.44 2.77 3.09 3.35 3.93 4.17 4.98 4.88 4.94
MAG1 (dB) 27.71 24.72 22.98 21.78 20.83 20.04 19.42 18.89 18.42 18.03 17.66 17.37 17.06 16.86 16.63 16.44 16.28 16.15 15.97 15.91 15.82 15.69 15.62 15.60 14.40 13.05 12.20 11.19 10.71 10.17 10.09 9.58 9.33 9.09 8.98 8.65 8.53 8.21 8.20 7.84
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE552R479A APPLICATION CIRCUIT (2.40-2.48 GHz)
+VG
C3 C9 C11
P1 J3
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
+VD
J4
C2 C8 C10
1.7
GND
C13
Drain
Gate
5.9
1.2
J1
IN
R1 C5
C14
C7
OU
0X001
AW
U1
C1
J2
RF IN
C6
C4
RF OUT
Source 0.5 0.5 6.1
0.5
Through hole 0.2 x 33
er=4.2 t=0.028
TAB
500855B
Note: Use rosin or other material to prevent solder from penetrating through-holes.
J3 +Vg
J4 +Vd
C13
C11
C9
C3
C2
C8
C10
C12
R1
C1
J1
C5
J2 RF OUTPUT
RF INPUT
C6
NE552R479A
C14 C4 C7
NE552R479A PARTS LIST
1 1 4 2 1 2 2 1 2 2 2 1 1 1 2 1 600S3R3CW TF-100637 MCH185A101JK MCR03J200 600S2R7BW 600S5R6CW 600S1R5CW TAJB475K010R MCH215F104ZP 0805CG102J9BB04 NE552R479A 703401 1250-003 2052-5636-02 FD-500855B C14 C2,C3 R1 C4,C7 C1,C5 C6 C12, C13 C10, C11 C8, C9 U1 P1 J3, J4 J1, J2 PCB 0603 3.3 pF CAP ATC TEST CIRCUIT BLK 2-56 x 3/16 PHILLIPS PAN HEAD 0603 100pF CAP ROHM 0603 20 OHM RESISTOR ROHM 0603 2.7pF CAP ATC 0603 5.6pF CAP ATC 0805 1.5pF CAP ATC CASE B 4.7 uF CAP AVX 0805 .1uF CAP ROHM 0805 1000 pF CAP PHIL6 IC NEC GROUND LUG CONCORD FEEDTHRU MURATA FLANGE MOUNT JACK RECEPTACLE S-BAND MODULE FABRICATION DRAWING 17 15 14 13 12 11 10 9 8 7 5 4 3 2 1
1.0
C12
NE552R479A TYPICAL APPLICATION CIRCUIT PERFORMANCE
OUTPUT POWER vs. INPUT POWER
34 32 30 f = 2.44 GHz
(TA = 25C)
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 6
IM3 vs. OUTPUT POWER
f = 2.44 GHz
Output Power, POUT (dBm)
26 24 22 20 18 8 10 12 14 16 18
3.6 V, 100mA 3.6 V, 300mA 5 V, 100mA 5 V, 300mA 8 V, 100mA 8 V, 300mA
IM3 (dBc)
28
3.6 V, 100mA 3.6 V, 300mA 5 V, 100mA 5 V, 300mA 8 V, 100mA 8 V, 300mA
20
22
24
8 10
12 14 16 18 20 22 24 26
Input Power, PIN (dBm)
Output Power, POUT (dBm), Each Tone
NE552R479A RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220C or higher Preheating time at 120 to 180C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200C or higher Preheating time at 120 to 150C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260C or below : 10 seconds or less : 60 seconds or less : 12030 seconds : 3 times : 0.2%(Wt.) or below : 215C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260C or below : 10 seconds or less : 120C or below : 1 time : 0.2%(Wt.) or below : 350C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260
Infrared Reflow
VPS
VP215
Wave Soldering
WS260
Partial Heating
HS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/11/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information.
Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.

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